IRF9Z24L

Features: `Advanced Process Technology`Surface Mount (IRF9Z24S)`Low-profile through-hole (IRF9Z24L)`175 Operating Temperature`Fast Switching`P- Channel`Fully Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -11 A ID @ TC = 100°...

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SeekIC No. : 004376928 Detail

IRF9Z24L: Features: `Advanced Process Technology`Surface Mount (IRF9Z24S)`Low-profile through-hole (IRF9Z24L)`175 Operating Temperature`Fast Switching`P- Channel`Fully Avalanche RatedSpecifications Par...

floor Price/Ceiling Price

Part Number:
IRF9Z24L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/6

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Product Details

Description



Features:

`Advanced Process Technology
`Surface Mount (IRF9Z24S)
`Low-profile through-hole (IRF9Z24L)
`175 Operating Temperature
`Fast Switching
`P- Channel
`Fully Avalanche Rated



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -11 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -7.7
IDM Pulsed Drain Current -44
PD @TA = 25°C Power Dissipation 3.7 W
PD @TC = 25°C Power Dissipation 60
W
  Linear Derating Factor 0.40 W/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 240 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 6.0 mJ
dv/dt Peak Diode Recovery dv/dt -4.5 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Third Generation HEXFETs IRF9Z24L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRF9Z24L is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z24L) is available for lowprofile applications.




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