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IRFAC40

Features: * 6.2A and 5.4A, 600V*r = 1.2 and 1.6 DS(ON)* Repetitive Avalanche Energy Rated* Simple Drive Requirements* Ease of Paralleling* Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards Specifications IRFAC40 IRFAC42 UNITSDrain to Source Breakdown Volta...

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IRFAC40: Features: * 6.2A and 5.4A, 600V*r = 1.2 and 1.6 DS(ON)* Repetitive Avalanche Energy Rated* Simple Drive Requirements* Ease of Paralleling* Related Literature - TB334, Guidelines for Soldering Surfa...

IRFAC40 Data Sheet

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Part Number:
IRFAC40
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* 6.2A and 5.4A, 600V
*r = 1.2  and 1.6 DS(ON)
* Repetitive Avalanche Energy Rated
* Simple Drive Requirements
* Ease of Paralleling
* Related Literature
   - TB334, "Guidelines for Soldering Surface Mount
   Components to PC Boards"


Specifications

                                                                                                  IRFAC40    IRFAC42    UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . .  .. VDS        600           600              V
Drain to Gate Voltage (RGS  = 20k) (Note 1)  . . . .  .. .VDGR      600          600               V
Continuous Drain Current  . . . . . . . . . . . . . . . . . . . .  . .  .ID        6.2            5.4               A
     TC   = 100 Co. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID        3.9            3.4               A
Pulsed Drain Current (Note 2)  . . . . . . . . . . . . . . . . .  .. IDM        25              22                A
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VGS         ±20          ±20              V 
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . .. PD            125           125              W
     Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . .                  10             1.0             W/
Single Pulse Avalanche Energy Rating (Note 3)
                                  Figures 15, 16) . . . . . . . . . . . . . EAS         570            570              mJ
Operating and Storage Temperature. . . . . . . . .. TJ , TSTG     - 55to 150    -55 to 150        
Maximum Temperature for Soldering
     Leads at 0.063in (1.6mm) from Case for 10s . . . .. TL             300            300              
     Package Body for 10s, See Techbrief 334. . . . . . .Tpkg            260            260            


Description

    These are N-Channel enhancement mode silicon gate power field effect transistors IRFAC40. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

    Formerly Developmental Type IRFAC40.




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