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MFG:IR  Package Cooled:TO-3  D/C:N/A  

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Part Number: IRFAG50

 

MFG: IR

Package Cooled: TO-3

D/C: N/A

Description: The HEXFET® technology is the key to InternationalRectifi...


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IRFAG50 General Description


    The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latest"State of the Art" design achieves: very low on-state resis-tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.

    The HEXFET transistors also feature all of the well estab-lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

    They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

IRFAG50 Maximum Ratings

 Parameter
Units
ID@VGS =0V,TC = 25°C
 Continuous Drain Current
5.6
A
ID@VGS =0V,TC=100°C
 Continuous Drain Current
3.5
IDM
 Pulsed Drain Current
22
PD @ TC = 25°C
 Max. Power Dissipation
150
W
 Linear Derating Factor
1.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
860
mJ
IAR
 Avalanche Current
5.6
A
EAR
 Repetitive Avalanche Energy
15
mJ
dv/dt
 Peak Diode Recovery dv/dt
1.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
oC
 Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
 Weight
11.5(typical)
g

IRFAG50 Features

Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling 

IRFAG50 datasheet

IRFAG50
PDF/DataSheet Download

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