IRFB18N50K

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.29 Ohms


Description

The IRFB18N50K is a kind of rectifier whose VDSS:500V, RDS(ON): 0.26, ID:17A.

The applications and benefits of IRFB18N50K can be summarized as (1)switch mode power supply (SMPS); (2)uninterruptible power supply; (3)high speed power switching; (4)hard switched and high frequency circuits; (5)low gate charge Qg results in simple drive requirement; (6)improved gate, avalanche and dynamicdv/dt ruggedness; (7)fully characterized capacitance and avalanche voltage and current; (8)LOW RDS(on).

The absolute maximum ratings of IRFB18N50K are (1)ID @ TC = 25°C continuous drain current, VGS @ 10V: 17A; (2)ID @ TC = 100°C continuous drain current, VGS @ 10V: 11 A; (3)pulsed drain current: 68A; (4)PD @TC = 25°C power dissipation: 220W; (5)linear derating factor 1.8 W/°C; (6)VGS gate-to-source voltage: ±30V; (7)dv/dt peak diode recovery dv/dt: 11 V/ns; (8)TJ, TSTG operating junction and storage temperature range: -55 to + 150°C; (9)soldering temperature, for 10 seconds(1: 6mm from case ): 300°C; (10)mounting torque, 6-32 or M3 screw: 10N.