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IRFB31N20DPBF

MOSFET MOSFT 200V 31A 82mOhm 70nC

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SeekIC No. : 00148652 Detail

IRFB31N20DPBF: MOSFET MOSFT 200V 31A 82mOhm 70nC

IRFB31N20DPBF Data Sheet

floor Price/Ceiling Price

US $ 1.33~2.75 / Piece | Get Latest Price
Part Number:
IRFB31N20DPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.75
  • $1.88
  • $1.39
  • $1.33
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 31 A
Resistance Drain-Source RDS (on) : 82 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 31 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 82 mOhms


Application

· High Frequency DC-DC converters
· Lead-Free


Specifications

Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 31 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 21
IDM Pulsed Drain Current 124
PD @TA = 25 Power Dissipation 3.1 W
PD @TC = 25 Power Dissipation 200
Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 2.1 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf`in (1.1N`m)



Parameters:

Technical/Catalog InformationIRFB31N20DPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C31A
Rds On (Max) @ Id, Vgs82 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 2370pF @ 25V
Power - Max3.1W
PackagingBulk
Gate Charge (Qg) @ Vgs107nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB31N20DPBF
IRFB31N20DPBF



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