IRFB33N15D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 33A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 2020pF @ 25V


Application

 High frequency DC-DC converters


Description

The features of IRFB33N15D are: (1)low gate-to-drain charge to reduce switching losses; (2)fully characterized capacitance including effective COSS to simplify design; (3)fully characterized avalanche voltage and current.

The following is about the absolute maximum ratings of IRFB33N15D: (1)continuous drain current, VGS @ 10V: 33A; (2)continuous drain current, VGS @ 10V: 24A; (3)drain current-pulse: 130A; (4)power dissipation: 3.8W; (5)linear derating factor: 1.1W/; (6)operating junction and storage temperature range: -55 to +175.

The electrical characteristics of the IRFB33N15D are: (1)drain-source breakdown voltage: 150V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 0.18V/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 0.056 max at VGS=10V, ID=20A; (4)gate thresholad voltage: 3.0V min and 5.5V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=30V; (6)gate-source reverse leakage: -100nA max at VGS=-30V; (7)drain-source leakage current: 25A min at VDS=150V, VGS=0V.

Parameters:

Technical/Catalog Information	IRFB33N15D
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	56 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	2020pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFB33N15D IRFB33N15D