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IRFB3507PBF

MOSFET MOSFT 75V 97A 8.8mOhm 88nC

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SeekIC No. : 00147576 Detail

IRFB3507PBF: MOSFET MOSFT 75V 97A 8.8mOhm 88nC

IRFB3507PBF Data Sheet

floor Price/Ceiling Price

US $ 1.03~2.12 / Piece | Get Latest Price
Part Number:
IRFB3507PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.12
  • $1.45
  • $1.08
  • $1.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 97 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 97 A


Features:

· Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
· Fully Characterized Capacitance and Avalanche SOA
· Enhanced body diode dV/dt and dI/dt Capability


Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits
·Lead-Free


Specifications

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V
97
A
ID @ TC= 70 Continuous Drain Current, VGS @ 10V
69
IDM Pulsed Drain Current
390
PD @TC = 25 Power Dissipation
190
W
  Linear Derating Factor
1.3
W/
VGS Gate-to-Source Voltage
± 20
V
dv/dt Peak Diode Recovery
5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
(1.6mm from case)
300
  Mounting torque, 6-32 or M3 screw
10lb`in (1.1N`m)
  




Parameters:

Technical/Catalog InformationIRFB3507PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C97A
Rds On (Max) @ Id, Vgs8.8 mOhm @ 58A, 10V
Input Capacitance (Ciss) @ Vds 3540pF @ 50V
Power - Max190W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB3507PBF
IRFB3507PBF



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