Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 150 V
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 17 A
Features: • Key Parameters Optimized for Class-D Audio Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for Ruggedness
• Can Deliver up to 200W per Channel into 8 Load in Half-Bridge Configuration AmplifierSpecifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain-to-Source Voltage |
150 |
V |
| VGS |
Gate-to-Source Voltage |
±20 |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
17 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
12 |
| IDM |
Pulsed Drain Current |
51 |
| PD @TC = 25°C |
Power Dissipation |
80 |
W |
| PD @TC = 100°C |
Power Dissipation |
40 |
| |
Linear Derating Factor |
0.5 |
W/ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds
(1.6mm from case) |
300 |
| |
Mounting torque, 6-32 or M3 screw |
10lb.in (1.1N.m) |
|
DescriptionThis Digital Audio MOSFET IRFB4019PbF is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features IRFB4019PbF combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Parameters: | Technical/Catalog Information | IRFB4019PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 95 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 800pF @ 50V |
| Power - Max | 80W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB4019PBF
IRFB4019PBF
|
IRFB4019PBF Data Sheet
