Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 18 A
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 200 V
Resistance Drain-Source RDS (on)
: 100 mOhms
Features: • Key parameters optimized for Class-D audio amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved efficiency
• Low QRR for better THD and lower EMI
• 175 operating junction temperature for ruggedness
• Can deliver up to 300W per channel into 8 load in half-bridge configuration amplifierSpecifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain-to-Source Voltage |
200 |
|
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
18 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
13 |
| IDM |
Pulsed Drain Current |
52 |
| PD @ TC = 25 |
Power Dissipation |
100 |
W |
| PD @ TC = 25 |
Power Dissipation |
52 |
| |
Linear Derating Factor |
0.70 |
W/ |
TJ
TSTG |
Operating Junction
Storage Temperature Range |
-55 to 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 |
| |
Mounting Torque, 6-32 or M3 Screw |
10lb`in (1.1N`m)) |
|
Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90DescriptionThis Digital Audio MOSFET IRFB4020PbF is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET IRFB4020PbF are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Parameters: | Technical/Catalog Information | IRFB4020PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 50V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB4020PBF
IRFB4020PBF
|
IRFB4020PBF Data Sheet
