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IRFB4103PbF

MOSFET N-CH 200V 17A TO-220AB

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SeekIC No. : 004376961 Detail

IRFB4103PbF: MOSFET N-CH 200V 17A TO-220AB

IRFB4103PbF Data Sheet

floor Price/Ceiling Price

US $ .66~.66 / Piece | Get Latest Price
Part Number:
IRFB4103PbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~3000
  • Unit Price
  • $.66
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

• Key parameters optimized for Class-D audio amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for ruggedness
• Can deliver up to 300W per channel into 8 load in half-bridge topology


Specifications

 
Parameter
Max.
Unit
VDS Drain- Source Voltage
200
V
VGS Gate-to-Source Voltage
±30
V
ID @ TC= 25 Continuous Drain Current, VGS @ 10V
17
A
ID @ TC= 70 Continuous Drain Current, VGS @ 10V
12
A
IDM Pulsed Drain Current
68
A
PD @TC= 25 Power Dissipation
140
W
PD @TC= 70 Power Dissipation
71
W
  Linear Derating Factor
0.95
W/
TJ,TSTG Junction and Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
(1.6mm from case)
300
  Mounting torque, 6-32 or M3 screw 10lb`in (1.1N`m)  



Description

This Digital Audio MOSFET IRFB4103PbF is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance  factors such as efficiency, THD and EMI. Additional features of this MOSFET IRFB4103PbF are 175 operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.




Parameters:

Technical/Catalog InformationIRFB4103PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs165 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 900pF @ 50V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB4103PBF
IRFB4103PBF



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