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IRFB4110QPBF

MOSFET

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IRFB4110QPBF: MOSFET

IRFB4110QPBF Data Sheet

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Part Number:
IRFB4110QPBF
Mfg:
International Rectifier
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 180 A
Mounting Style : Through Hole Package / Case : TO-220AB    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 180 A


Features:

·  Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·  Fully Characterized Capacitance and Avalanche SOA
·  Enhanced body diode dV/dt and dI/dt Capability
·  175°C Operating Temperature
·  Automotive [Q101] Quali


Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits
·Lead-Free


Specifications

Parameter Max. Units
VGS Gate-to-Source Voltage ± 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 180 A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 130 A
IDM Pulsed Drain Current � 670 A
PD @TA = 25°C Maximum Power Dissipation 370 W
Linear Derating Factor 2.5 W/°C
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
  Soldering Temperature, for 10 seconds
(1.6mm from case)		 300 °C
  Mounting torque, 6-32 or M3 screw 10lbin (1.1Nm)  
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150 °C



Parameters:

Technical/Catalog InformationIRFB4110QPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C180A
Rds On (Max) @ Id, Vgs4.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 9620pF @ 50V
Power - Max370W
PackagingTube
Gate Charge (Qg) @ Vgs210nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB4110QPBF
IRFB4110QPBF



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