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MFG:IR  Package Cooled:TO-220  D/C:09+  

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Part Number: IRFB4212PbF

 

MFG: IR

Package Cooled: TO-220

D/C: 09+

Description: This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSF...


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IRFB4212PbF General Description


This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

IRFB4212PbF Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ± 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 A
ID @ TC =100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current 57 A
PD @ TC = 25 Maximum Power Dissipation 60 W
PD @ TC =100°C Maximum Power Dissipation 30 W
  Linear Derating Factor

0.4

 W
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Clamping Pressure 300 N

IRFB4212PbF Features

• Key parameters optimized for Class-D audio amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for ruggedness
• Can deliver up to 150W per channel into4Ωload in half-bridge topology

IRFB4212PbF datasheet

IRF034
PDF/DataSheet Download

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