Position: Home  > All Categories> Integrated Circuits (ICs) > IRFB4227PBF

IRFB4227PBF

MOSFET MOSFT 200V 65A 26mOhm 70nC Qg

product image

IRFB4227PBF Picture
See larger image
SeekIC No. : 00147955 Detail

IRFB4227PBF: MOSFET MOSFT 200V 65A 26mOhm 70nC Qg

IRFB4227PBF Data Sheet

floor Price/Ceiling Price

US $ 1.11~2.28 / Piece | Get Latest Price
Part Number:
IRFB4227PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.28
  • $1.55
  • $1.16
  • $1.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 65 A
Resistance Drain-Source RDS (on) : 24 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 24 mOhms
Continuous Drain Current : 65 A


Features:

Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
 Repetitive Avalanche Capability for Robustness and Reliability


Specifications

  Parameter
Max.
Units
VGS Gate-to-Source Voltage
±30
V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
65
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
46
IDM Pulsed Drain Current
260
IRP @ TC = 100°C Repetitive Peak Current
130
PD @TC = 25°C Power Dissipation
330
W
PD @TC = 100°C Power Dissipation
190
  Linear Derating Factor
2.2
W/°C
TJ Operating Junction and
-40 to + 175
°C
TSTG Storage Temperature Range
  Soldering Temperature for 10 seconds
300
  Mounting Torque, 6-32 or M3 Screw
10lb`in (1.1N`m)
N



Description

Connection Diagram


Parameters:

Technical/Catalog InformationIRFB4227PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C65A
Rds On (Max) @ Id, Vgs24 mOhm @ 46A, 10V
Input Capacitance (Ciss) @ Vds 4600pF @ 25V
Power - Max330W
PackagingTube
Gate Charge (Qg) @ Vgs98nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB4227PBF
IRFB4227PBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Cables, Wires
821-0814-a
415-0100-150
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more