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IRFB4227PBF

MOSFET MOSFT 200V 65A 26mOhm 70nC Qg

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SeekIC No. : 00147955 Detail

IRFB4227PBF: MOSFET MOSFT 200V 65A 26mOhm 70nC Qg

IRFB4227PBF Data Sheet

floor Price/Ceiling Price

US $ 1.11~2.28 / Piece | Get Latest Price
Part Number:
IRFB4227PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.28
  • $1.55
  • $1.16
  • $1.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 65 A
Resistance Drain-Source RDS (on) : 24 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 24 mOhms
Continuous Drain Current : 65 A


Features:

Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
 Repetitive Avalanche Capability for Robustness and Reliability


Specifications

  Parameter
Max.
Units
VGS Gate-to-Source Voltage
±30
V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
65
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
46
IDM Pulsed Drain Current
260
IRP @ TC = 100°C Repetitive Peak Current
130
PD @TC = 25°C Power Dissipation
330
W
PD @TC = 100°C Power Dissipation
190
  Linear Derating Factor
2.2
W/°C
TJ Operating Junction and
-40 to + 175
°C
TSTG Storage Temperature Range
  Soldering Temperature for 10 seconds
300
  Mounting Torque, 6-32 or M3 Screw
10lb`in (1.1N`m)
N



Description

Connection Diagram


Parameters:

Technical/Catalog InformationIRFB4227PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C65A
Rds On (Max) @ Id, Vgs24 mOhm @ 46A, 10V
Input Capacitance (Ciss) @ Vds 4600pF @ 25V
Power - Max330W
PackagingTube
Gate Charge (Qg) @ Vgs98nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB4227PBF
IRFB4227PBF



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