IRFB4228PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 83 A


Features:

`Advanced Process Technology
`Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch
`Applications Low E<sub>PULSE</sub>  Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
`Low Q_G for Fast Response
`High Repetitive Peak Current Capability for Reliable Operation
`Short Fall & Rise Times for Fast Switching
`175 Operating Junction Temperature for  Improved Ruggedness
`Repetitive Avalanche Capability for Robustness and Reliability


Specifications

Symbol	Parameter	Max.	Units
VGS	Drain-Source Voltage	±30	V
ID @ TC =25	Continuous Drain Current,VGE @ 10V	83	A
ID @ TC =100	Continuous Drain Current,VGE @ 10V	59
IDM	Pulsed Drain Current	330
IRP @ TC =100	Pulsed Drain Current	170
PD @TC=25	Maximum Power Dissipation	330	W
PD @TC=100	Maximum Power Dissipation	170	W
	Linear Derating Factor	2.2	W/
TJ,TSTG	Operating Junction and Storage Temperature Range	-40 to+175
	Soldering Temperature for 10 seconds	300
	Mounting Torque, 6-32 or M3 Screw	10lb.in (1.1N.m)	N

	Parameter	Typ	Max.	Units
RJC RCS RJA	Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient	- 0.50 -	0.45 - 62	/W

Description

This HEXFET® Power MOSFET IRFB4228PbF is specifically designed for Sustain;Energe Recovery & Pass switch applications in Plasma Display Panels.This MOSFET utilizes the latest processing techniquse to achieve low on-resistance per silicon area and low EPULSE rating.Additional features of this MOSFET are 175 operating junction temperature and high repetitive peak current capability.These features combing to make this MOSFET a highly efficient ,robust and reliable device for PDP driving applications.

 

Parameters:

Technical/Catalog Information	IRFB4228PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	83A
Rds On (Max) @ Id, Vgs	15 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds	4530pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	107nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFB4228PBF IRFB4228PBF