IRFB4233PBF

The features of IRFB4233PBF are: (1)advanced process technology; (2)ley parameters optimized for PDP sustain, energy recovery and pass switch applications; (3)low EPULSE rating to reduce power dissipation in PDP sustain, energy recovery and pass switch applications; (4)low QG for fast response.

The following is about the absolute maximum ratings of IRFB4233PBF: (1)gate-source voltage: ±30V; (3)continuous drain current, VGS @ 10V: 56A; (4)continuous drain current, VGS @ 10V: 39A; (5)drain current-pulse: 220A; (6)power dissipation: 370W; (8)linear derating factor: 2.5W/; (9)operating junction and storage temperature range: -40 to +175.

The electrical characteristics of the IRFB4233PBF are: (1)drain-source breakdown voltage: 230V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 200mV/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 31m typ and 37m max at VGS=10V, ID=28A; (4)gate thresholad voltage: 3.0V min and 5.0V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=20V; (6)gate-source reverse leakage: -100nA max at VGS=-20V; (7)drain-source leakage current: 5.0A min at VDS=184V, VGS=0.