IRFB4233PBF

MOSFET

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SeekIC No. : 00156088 Detail

IRFB4233PBF: MOSFET

floor Price/Ceiling Price

US $ 1.85~1.85 / Piece | Get Latest Price
Part Number:
IRFB4233PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2145
  • Unit Price
  • $1.85
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 230 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 56 A
Resistance Drain-Source RDS (on) : 37 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 56 A
Drain-Source Breakdown Voltage : 230 V
Resistance Drain-Source RDS (on) : 37 m Ohms


Description

The features of IRFB4233PBF are: (1)advanced process technology; (2)ley parameters optimized for PDP sustain, energy recovery and pass switch applications; (3)low EPULSE rating to reduce power dissipation in PDP sustain, energy recovery and pass switch applications; (4)low QG for fast response.

The following is about the absolute maximum ratings of IRFB4233PBF: (1)gate-source voltage: ±30V; (3)continuous drain current, VGS @ 10V: 56A; (4)continuous drain current, VGS @ 10V: 39A; (5)drain current-pulse: 220A; (6)power dissipation: 370W; (8)linear derating factor: 2.5W/; (9)operating junction and storage temperature range: -40 to +175.

The electrical characteristics of the IRFB4233PBF are: (1)drain-source breakdown voltage: 230V min at VGS=0V, ID=250A; (2)breakdown voltage temp. coefficient: 200mV/ typ at reference to 25, ID=1mA; (3)static drain-source on-state resistance: 31m typ and 37m max at VGS=10V, ID=28A; (4)gate thresholad voltage: 3.0V min and 5.0V max at VDS=VGS, ID=250A; (5)gate-source forward leakage: 100nA max at VGS=20V; (6)gate-source reverse leakage: -100nA max at VGS=-20V; (7)drain-source leakage current: 5.0A min at VDS=184V, VGS=0.




Parameters:

Technical/Catalog InformationIRFB4233PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)230V
Current - Continuous Drain (Id) @ 25° C56A
Rds On (Max) @ Id, Vgs37 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds 5510pF @ 25V
Power - Max370W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB4233PBF
IRFB4233PBF



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