IRFB42N20D

MOSFET N-CH 200V 44A TO-220AB

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SeekIC No. : 003432398 Detail

IRFB42N20D: MOSFET N-CH 200V 44A TO-220AB

floor Price/Ceiling Price

US $ 1.98~1.98 / Piece | Get Latest Price
Part Number:
IRFB42N20D
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~150
  • Unit Price
  • $1.98
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 44A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) @ Vgs: 140nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3430pF @ 25V
Power - Max: 2.4W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 140nC @ 10V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 44A
Input Capacitance (Ciss) @ Vds: 3430pF @ 25V
Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V


Features:

· Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
· Fully Characterized Avalanche Voltage and Current



Application

·High frequency DC-DC converters


Specifications

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
42.6
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
30
IDM
Pulsed Drain Current
170
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
300

Linear Derating Factor
2
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
TBD
V/ns

TJ

Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm from case )
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)



Parameters:

Technical/Catalog InformationIRFB42N20D
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs55 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds 3430pF @ 25V
Power - Max2.4W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFB42N20D
IRFB42N20D



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