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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 42.6 A | ||
| Resistance Drain-Source RDS (on) : | 55 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 44 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 31 | |
| IDM | Pulsed Drain Current | 180 | |
| PD @TA = 25°C | Power Dissipation | 2.4 | W |
| PD @TC = 25°C | Power Dissipation | 330 | W |
| Linear Derating Factor | 2.2 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 30 | V |
| dv/dt | Peak Diode Recovery dv/dt | 2.5 | V/ns |
| TJ | Operating Junction and | -55 to + 175 | °C |
| TSTG | Storage Temperature Range | ||
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torqe, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRFB42N20DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 44A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 26A, 10V |
| Input Capacitance (Ciss) @ Vds | 3430pF @ 25V |
| Power - Max | 2.4W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 140nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB42N20DPBF IRFB42N20DPBF |