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IRFB4310ZPBF

MOSFET MOSFT 100V 127A 6mOhm 120nC Qg

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SeekIC No. : 00146066 Detail

IRFB4310ZPBF: MOSFET MOSFT 100V 127A 6mOhm 120nC Qg

IRFB4310ZPBF Data Sheet

floor Price/Ceiling Price

US $ 1.11~2.28 / Piece | Get Latest Price
Part Number:
IRFB4310ZPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.28
  • $1.55
  • $1.16
  • $1.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 127 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 127 A


Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits


Specifications

Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 127 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 90
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 560
PD @TC = 25°C Maximum Power Dissipation 250 W
  Linear Derating Factor 1.7 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery 18 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
  Soldering Temperature, for 10 seconds
(1.6mm from case)		 300
  Mounting torque, 6-32 or M3 screw 10lb in (1.1Nm)  



Parameters:

Technical/Catalog InformationIRFB4310ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs6 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 6860pF @ 50V
Power - Max250W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB4310ZPBF
IRFB4310ZPBF



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