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IRFB4332PBF

MOSFET MOSFT 250V 60A 33mOhm 99nC Qg

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SeekIC No. : 00149065 Detail

IRFB4332PBF: MOSFET MOSFT 250V 60A 33mOhm 99nC Qg

IRFB4332PBF Data Sheet

floor Price/Ceiling Price

US $ 1.11~2.28 / Piece | Get Latest Price
Part Number:
IRFB4332PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.28
  • $1.55
  • $1.16
  • $1.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 33 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 33 mOhms


Features:

` Advanced Process Technology
` Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
` Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
` Low QG for Fast Response
` High Repetitive Peak Current Capability for Reliable Operation
` Short Fall & Rise Times for Fast Switching
`175 Operating Junction Temperature for Improved Ruggedness
` Repetitive Avalanche Capability for Robustness and Reliability


Specifications

  Parameter Max. Units
VGS Gate-to-Source Voltage ±30 V
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 60 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 42
IDM Pulsed Drain Current 230
IRP @ TC =100 Repetitive Peak Current 120
PD @ TC = 25 Power Dissipation 390 W
PD @ TC = 25 Power Dissipation 200
  Linear Derating Factor 2.6 W/
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -40 to 175
  Soldering Temperature, for 10 seconds 300
  Mounting Torque, 6-32 or M3 Screw 10lb`in (1.1N`m)) N
Repetitive rating; pulse width limited by max. junction temperature.
Half sine wave with duty cycle = 0.25, ton=1sec.


Parameters:

Technical/Catalog InformationIRFB4332PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs33 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 5860pF @ 25V
Power - Max390W
PackagingTube
Gate Charge (Qg) @ Vgs150nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFB4332PBF
IRFB4332PBF



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