MOSFET MOSFT 100V 75A 14mOhm 110nC
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 75 A |
| Mounting Style : | Through Hole | Package / Case : | TO-220AB |
| Packaging : | Tube |
|
Parameter |
Maximum |
Units | |
|
ID @ TC=25 |
Continuous Drain Current,VGS @-10V |
75 |
A |
|
ID @ TC=100 |
Continuous Drain Current,VGS @-10V |
53 | |
|
IDM |
Pulsed Drain Current |
300 | |
|
PD@ TC= 25 |
Power Dissipation |
3.8 |
W |
|
PD@ TA= 25 |
Power Dissipation |
200 | |
| Linear Derating Factor |
1.4 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
8.2 |
V/nS |
|
Tj,TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting torqe,6-32 or M3 screw | 10lbf`in(1.1N`m) | ||
| Technical/Catalog Information | IRFB4710PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 45A, 10V |
| Input Capacitance (Ciss) @ Vds | 6160pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB4710PBF IRFB4710PBF |