MOSFET N-CH 100V 59A TO-220AB
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|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
49 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
52 | |
| IDM | Pulsed Drain Current |
236 | |
| PD @TA = 25°C | Power Dissipation |
3.8 |
W |
| PD @TC = 25°C | Power Dissipation |
200 | |
| Linear Derating Factor |
1.3 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 30 |
V |
| dv/dt | Peak Diode Recovery dv/dt |
3.3 |
V/ns |
| TJ | Operating Junction and |
-55 to + 175 |
°C |
| TSTG | Storage Temperature Range | ||
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting torqe, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRFB59N10D |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 59A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 35.4A, 10A |
| Input Capacitance (Ciss) @ Vds | 2450pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 114nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRFB59N10D IRFB59N10D |