IRFB9N30APBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.45 Ohms
Continuous Drain Current : 9.3 A


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	9.3	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	5.9
IDM	Pulsed Drain Current	37
PD @TC = 25°C	C Power Dissipation	96	W
	Linear Derating Factor	0.77	W/°C
VGS	Gate-to-Source Voltage	±30	V
EAS	Single Pulse Avalanche Energy	160	mJ
IAR	Avalanche Current	9.3	A
EAR	Repetitive Avalanche Energy	9.6	mJ
dv/dt	Peak Diode Recovery dv/dt	4.6	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Description

Third Generation HEXFETs IRFB9N30APbF from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package IRFB9N30APbF is universally preferred for all commercial-industrial applications at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.