IRFBA1405P

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 260nC @ 10V
Power - Max: 330W
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 5480pF @ 25V
Package / Case: Super-220?-3 (Straight Leads)
Supplier Device Package: SUPER-220? (TO-273AA)
Current - Continuous Drain (Id) @ 25° C: 174A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 101A, 10V


Application

Electric Power Steering (EPS)
Anti-lock Braking System (ABS)
lWiper Control
Climate Control
 Power Door


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	174Ü	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	123Ü
IDM	Pulsed Drain Current Å	680
PD @TA = 25°C	Power Dissipation á	330	W
PD @TC = 25°C	Power Dissipation	2.2
	Linear Derating Factor	+30	W/°C
VGS	Gate-to-Source Voltage	560	V
TSTG	Peak Diode Recovery dv/dt É	See Fig.12a, 12b, 15, 16	V/ns
	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300	°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 175 -55 to + 175
	Recommended clip force	20	N

Description

Specifically designed for Automotive applications IRFBA1405P, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO- 247 package. The combination of extremely low on-resistance silicon and the Super-220 TM package makes it ideal to reduce the component count in multiparalled TO-220 applications IRFBA1405P, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has been designed to meet automotive, Q101, qualification standard. These benefits make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.


Parameters:

Technical/Catalog Information	IRFBA1405P
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	174A
Rds On (Max) @ Id, Vgs	5 mOhm @ 101A, 10V
Input Capacitance (Ciss) @ Vds	5480pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	260nC @ 10V
Package / Case	Super-220?-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFBA1405P IRFBA1405P