IRFBA1405PPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 174 A
Package / Case : TO-273AA


Application

Electric Power Steering (EPS)
Anti-lock Braking System (ABS)
Wiper Control
Climate Control
Power Door
Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	174	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	123
IDM	Pulsed Drain Current	680
PD @ TC = 25	Max. Power Dissipation	330	W
	Linear Derating Factor	2.2	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	560	mJ
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
dv/dt	Peak Diode Recovery dv/dt	5.0
TJ TSTG	Operating Junction Storage Temperature Range	-40 to + 175 -55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Recommended clip force	20	g

Description

Specifically designed for Automotive applications, this Stripe Planar design IRFBA1405PPbF of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO-247 package. The combination of extremely low on-resistance silicon and the Super-220 ^TM package makes it ideal to reduce the component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has been designed to meet automotive, Q101, qualification standard.

These benefits IRFBA1405PPbF make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFBA1405PPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	174A
Rds On (Max) @ Id, Vgs	5 mOhm @ 101A, 10V
Input Capacitance (Ciss) @ Vds	5480pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	260nC @ 10V
Package / Case	Super-220?-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFBA1405PPBF IRFBA1405PPBF