Purchase IRFBA35N60C, In-stock IRFBA35N60C From SeekIC.
- Table of contents:
IRFBA35N60C
-
Suppliers
DataSheet
General Description
IRFBA35N60C Maximum Ratings
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
35 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
22 | |
|
IDM |
Pulsed Drain Current |
140 | |
|
PD @TC = 25°C |
Power Dissipation |
250 |
W |
| Linear Derating Factor |
2.0 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
± 20 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
TBD |
V/ns |
|
TJ |
Operating Junction and |
-40 to + 150 -55 to + 150 |
|
|
TSTG |
Storage Temperature Range | ||
| Soldering Temperature, for 10 seconds (1.6mm from case ) |
300 (1.6mm from case ) | ||
| Recommended clip force |
20 |
N |
IRFBA35N60C Typical Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Uninterruptible Power Supply
High Speed Power Switching
IRFBA35N60C
PDF/DataSheet Download
- Datasheet: IRFBA35N60C
- File Size: 49948 KB
- Manufacturer:
- Click here to Download
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- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
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- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
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- IRF [International Rectifier]
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- ·IRF054SMD
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- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
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- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
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