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MFG:IR  Package Cooled:D2-PAK  D/C:09+  

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Part Number: IRFBC20S

 

MFG: IR

Package Cooled: D2-PAK

D/C: 09+

Description: Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching,...


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IRFBC20S General Description


Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2Pak is a surface mount power package capable of the accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC20L) is available for low-profile applications.

IRFBC20S Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 2.2 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 1.4
IDM Pulsed Drain Current 8.0
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 50 W
  Linear Derating Factor 0.40 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 84 mJ
IAR Avalanche Current 2.2 A
EAR Repetitive Avalanche Energy 5.0 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRFBC20S Features

Surface Mount (IRFBC20S)
Low-profile through-hole (IRFBC20L)
 Available in Tape & Reel (IRFBC20S)
Dynamic dv/dt Rating
150°C Operating Temperature
 Fast Switching
Fully Avalanche Rated

IRFBC20S datasheet

IRFBC20S
PDF/DataSheet Download

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