IRFBC20STRR, US $ .88-.88, IRFBC20STRR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003431870 Detail

IRFBC20STRR: MOSFET N-CH 600V 2.2A D2PAK

IRFBC20STRR Data Sheet

US $ .88~.88 / Piece | Get Latest Price

Part Number:: IRFBC20STRR
Mfg:
Supply Ability:: 5000

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0~800

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$.88

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15 Days

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Upload time: 2024/5/16

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Recent History
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Product Details

Quick Details

Series:	-	Manufacturer:	Vishay Siliconix
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Current - Collector (Ic) (Max):	-	FET Feature:	Standard
Drain to Source Voltage (Vdss):	600V	Continuous Drain Current :	15 A
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	2.2A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	4.4 Ohm @ 1.3A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	18nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	350pF @ 25V
Power - Max:	3.1W	Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Supplier Device Package:	D2PAK

Description

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 600V
Input Capacitance (Ciss) @ Vds: 350pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 2.2A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V

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IRFBC20STRR

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