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IRFBC30AS

MOSFET N-Chan 600V 3.6 Amp

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SeekIC No. : 00164513 Detail

IRFBC30AS: MOSFET N-Chan 600V 3.6 Amp

IRFBC30AS Data Sheet

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Part Number:
IRFBC30AS
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 2.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 2.2 Ohms


Application

Switch Mode Power Supply (SMPS)
 Uninterruptable Power Supply
High speed power switchi


Specifications

. Parameter Max. Units
ID @ TC=25°C Continuous Drain Current, VGS @ 10V 3.6 A
ID @ TC=100°C Continuous Drain Current, VGS @ 10V 2.3
IDM Pulsed Drain Current 14
PD @TC = 25°C Power Dissipation 74 w
. Linear Derating Factor 0.69 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150 °C
. Soldering Temperature, for 10 seconds 300 (1.6mm from case )







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