IRFBC30S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 2.2 Ohms


Features:

 Surface Mount (IRFBC30S)
 Low-profile through-hole (IRFBC30L)
Available in Tape & Reel (IRFBC30S)
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated


Specifications

</table

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	3.6	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	2.3
IDM	Pulsed Drain Current	14
PD @TA = 25°C	Power Dissipation	3.1	W
PD @TC = 25°C	Power Dissipation	74	W
	Linear Derating Factor	0.59	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	290	mJ
IAR	Avalanche Current	3.6	A
EAR	Repetitive Avalanche Energy	7.4	mJ
dv/dt	Peak Diode Recovery dv/dt	3.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D²Pak IRFBC30S is a surface mount power package capable of the accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC30L) is available for low-profile applications.