IRFBC40AL Selling Leads, Price trend, IRFBC40AL DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003432868 Detail

IRFBC40AL: MOSFET N-CH 600V 6.2A TO-262

IRFBC40AL Data Sheet

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Part Number:: IRFBC40AL
Mfg:
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/30

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Recent History
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Product Details

Quick Details

Series:	-	Manufacturer:	Vishay Siliconix
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	600V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	6.2A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 3.7A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	42nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1036pF @ 25V
Power - Max:	125W	Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package:	I2PAK

Description

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 6.2A
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 125W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
Supplier Device Package: I2PAK
Input Capacitance (Ciss) @ Vds: 1036pF @ 25V

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IRFBC40AL

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