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IRFBC40AS

MOSFET N-Chan 600V 6.2 Amp

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SeekIC No. : 00166611 Detail

IRFBC40AS: MOSFET N-Chan 600V 6.2 Amp

IRFBC40AS Data Sheet

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Part Number:
IRFBC40AS
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

 Low Gate Charge Qg results in Simple Drive Requirement
 Improved Gate, Avalanche and dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current
 Effective Coss Specified ( See AN 1001)


Application

Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
 High speed power switching


Specifications

. Parameter Max. Units
ID @ TC=25°C Continuous Drain Current, VGS @ 10V 6.2 A
ID @ TC=100°C Continuous Drain Current, VGS @ 10V 3.9
IDM Pulsed Drain Current 25
PD @TC = 25°C Power Dissipation 125 w
. Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 6.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150 °C
. Soldering Temperature, for 10 seconds 300 (1.6mm from case )







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