IRFBC40ASPBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:






Specifications






Description

      IRFBC40ASPbF is widely used in Switch Mode Power Supply (SMPS),uninterruptable power supply and high speed power switching.Then is about the benefits.The Low Gate Charge Qg results in Simple Drive Requirement.Then is the improved gate,avalance and dynamic dv/dt ruggedness.The third one is the fully charaterized capacitance and avalance voltage and current.Furthermore,it is effective coss specified.What's more,it is lead-free.
      The following is about the absolute maximum ratings IRFBC40ASPbF. The maximum I_D(continuous drain current) is 6.2 A at T_C=25 and V_GS=10 V and 3.9 A at T_C=100 and V_GS=3.9 V.The maximum I_DM (Pulsed drain current)  is 25 A.The I_LM (clamped inductive load current) is 92 A.The maximum V_GS (gate-to-source voltage) is ±30 V.The maximum P_D (power dissipation) is 125 W at T_C=25.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to 150.The soldering temperature for 10 seconds is 300.The maximum dv/dt (peak diode recovery dv/dt) is 6.0 V/ns.The maximum linear derating factor is 1.0 W/.Then is about the thermal resistance.The maximum R_JC (Junction-to-Case) IRFBC40ASPbF is 1.0/W.The maximum R_JA (Junction-to-Ambient (PCB mounted,steady-state)) is 40/W.
      What comes next is about the avalanche characteristics IRFBC40ASPbF. The maximum E_AS (single pulse avalanche energy) is 570 mJ.The maximum I_AR (avalanche current) is 6.2 A.The maximum EAR (repetitive avalanche energy) is 13 mJ.Next is about the static characteristics at T_J=25.The minimum V_(BR)DSS (drain-to-source breakdown voltage) is 600 V at V_GS=0 V,I_D=250A.The typical V_(BR)DSS/T_J (breakdown voltage temperature coefficient) is 0.66 V/ at T_J=25 and I_D=1mA.The maximum R_DS(on) (static drain-to-source on resistance) is 1.2 at V_GS=10 V,I_D=3.7A.The V_GS(th) (gate threshold voltage) is 2.0 V and the maximum is 4.0 V at V_DS=VGS,I_D=250A.The maximum I_DSS (drain-to-source leakage current) is 25A at V_DS=600 V,V_GS=0 V and is 250A at V_DS=480 V,V_GS=0 V,T_J=125.The maximum (I_GSS) (gate-to-source forward leakage) IRFBC40ASPbF is 100 nA at V_GS=30 V and the maximum (I_GSS) (gate-to-source reverse leakage) is -100 nA at V_GS=-30 V.