IRFBC40LC

MOSFET N-Chan 600V 6.2 Amp

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IRFBC40LC Picture
SeekIC No. : 00158844 Detail

IRFBC40LC: MOSFET N-Chan 600V 6.2 Amp

floor Price/Ceiling Price

US $ 2.92~3.12 / Piece | Get Latest Price
Part Number:
IRFBC40LC
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~722
  • 722~1000
  • 1000~2000
  • Unit Price
  • $3.12
  • $3
  • $2.92
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:






Specifications






Description

      The IRFBC40LC has the following features including Ultra Low Gate Charge;Reduced Gate Drive Requirement;Enhanced 30 V, VGS Rating;Reduced Ciss, Coss, Crss;Extremely High Frequency Operation;Repetitive Avalanche Rated;Lead (Pb)-free Available.
      This new series of low charge Power MOSFETs IRFBC40LC achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications.
      Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
      The products shown herein IRFBC40LC are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.






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