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IRFBE30L

MOSFET N-Chan 800V 4.1 Amp

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SeekIC No. : 00165600 Detail

IRFBE30L: MOSFET N-Chan 800V 4.1 Amp

IRFBE30L Data Sheet

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Part Number:
IRFBE30L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-262
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

·Dynamic dv/dt Rating
·Repetitive Avalanche Rated
·Fast Switching
·Ease of Paralleling
·Simple Drive Requirements


Specifications
Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current, VGS @ 10V
4.1
A
ID @ TC = 100
Continuous Drain Current, VGS @ 10V
2.6
IDM
Pulsed Drain Current
16
PD @TC = 25
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
260
mJ
IAR
Avalanche Current
4.1
A
EAR
Repetitive Avalanche Energy
13
mJ
dv/dt
Peak Diode Recovery dv/dt
2.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)



Description

Third Generation HEXFETs of the IRFBE30L from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.




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