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IRFBE30LPBF

MOSFET N-Chan 800V 4.1 Amp

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SeekIC No. : 00146869 Detail

IRFBE30LPBF: MOSFET N-Chan 800V 4.1 Amp

IRFBE30LPBF Data Sheet

floor Price/Ceiling Price

US $ 1.1~1.7 / Piece | Get Latest Price
Part Number:
IRFBE30LPBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.7
  • $1.37
  • $1.24
  • $1.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-262
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

􀁏 ·Dynamic dv/dt Rating
􀁏 ·Repetitive Avalanche Rated
􀁏 ·Fast Switching
􀁏 ·Ease of Paralleling
􀁏 ·Simple Drive Requirements
􀁏 ·Lead-Free


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 4.1 A
ID @ TC =100 Continuous Drain Current, VGS @ 10V 2.6
IDM Pulsed Drain Current   􀀀 16
PD @TC = 25 Maximum Power Dissipation 125 W
  Linear Derating Factor 1.0 W/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 260 mJ
IAR Avalanche Current 􀀀 4.1 A
EAR Repetitive Avalanche Energy 􀀀 13 mJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 150  
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)  



Description

Third Generation HEXFETs of the IRFBE30LPbF from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.




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