IRFBG30

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 5 Ohms
Continuous Drain Current : 3.1 A


Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available




Specifications

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			VDS	1000	V
Gate-Source Voltage			VGS	±20
Continuous Drain Current	VGS at 10 V	TC = 25	ID	3.1	A
		TC = 100		2.0
Pulsed Drain Currenta			IDM	12
Linear Derating Factor				1.0	W/
Single Pulse Avalanche Energyb			EAS	280	mJ
Repetitive Avalanche Currenta			IAR	3.1	A
Repetitive Avalanche Energya			EAR	13	mJ
Maximum Power Dissipation		TC = 25	PD	125	W
Peak Diode Recovery dV/dtc			dV/dt	1.0	V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to + 150
Mounting Torque		6-32 or M3 screw		10 1.1	lbf ` in N ` m
Soldering Recommendations (Peak Temperature)		for 10 s		300d

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 55 mH, R_G = 25 , I_AS = 3.1 A (see fig. 12).
c. I_SD 3.1 A, dI/dt 80 A/s, V_DD 600, T_J 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply




Description

Third generation Power MOSFETs of the IRFBG30 from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

The TO-IRFBG30 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.