Purchase IRFC450, In-stock IRFC450 From SeekIC.
Part Number: IRFC450
Description: The features of IRFC450 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polys...
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IRFC450
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General Description
IRFC450 General Description
The features of IRFC450 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperature reliability.
The electrical characteristics of the IRFC450 are: (1)drain-source breakdown voltage: 500V min at VGS=0V, ID=250A; (2)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (3)gate-source leakage current: ±100nA max at VGS=±20V; (4)zero gate voltage drain current: 250A max; (5)static drain-source on-state resistance: 0.4 max at VGS=10V, ID=20A; (6)ciss input capacitance: 3000pF; (7)coss output capacitance: 450pF; (8)crss reverse transfer capacitance: 150pF max.
IRFC450
PDF/DataSheet Download
- Datasheet: IRFC450
- File Size: 57834 KB
- Manufacturer: IXYS [IXYS Corporation]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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