Position: Home > Datasheet list > IRF Series > Index I > IRFD014
Electronica China

Purchase IRFD014, In-stock IRFD014 From SeekIC.

MFG:Other  Category:Other  

IRFD014 Product Image

IRF Series Datasheet download

Five Points

Part Number: IRFD014

Category: Other

MFG: Other

 

 

Description: The IRFD014 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The thi...


Urgent Purchase

IRFD014 General Description


The IRFD014 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is P-channel.The fourth one is 175 operating temperature.The fifth one is fast switching.The sixth one is ease of paralleling.The seventh one is simple drive requirements.

Third generation HEXFETs IRFD014 from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.The 4-pin DIP package is low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers.The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

The IRFD014 has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is 1.7,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is 1.2,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is 14,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 1.3,the units is W.When parameter is junction and storage temperature range,the Max. is -55 to +175,the units IRFD014 is .When parameter is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .



IRFD014 Maximum Ratings



IRFD014 Features



IRFD014 datasheet

IRFD014
PDF/DataSheet Download

Find IRFD014 Suppliers

  • ·IRF034
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 147521 KB
  • IRF034 Datasheet Download
  • ·IRF044
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 22513 KB
  • IRF044 Datasheet Download
  • ·IRF044SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 21905 KB
  • IRF044SMD Datasheet Download
  • ·IRF054
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 149688 KB
  • IRF054 Datasheet Download
  • ·IRF054SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 23141 KB
  • IRF054SMD Datasheet Download
  • ·IRF100
  • ETC [ETC] 
  • 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 
  • 86902 KB
  • IRF100 Datasheet Download
  • ·IRF101
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 27 A, 60-100V 
  • 149859 KB
  • IRF101 Datasheet Download
  • ·IRF1010E
  • IRF [International Rectifier] 
  • Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 
  • 200209 KB
  • IRF1010E Datasheet Download

IRFD014 Relative Products

  • IRFC460AB

    IRFC460AB

    The IRFC460AB has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 515V Min.,the test conditions is VGS=0V,ID=150A.When parameter is RDS(on),the descripti...

  • IRFC450

    IRFC450

    The features of IRFC450 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperature reliability. The electrical charact...

  • IRFC43N50KB

    IRFC43N50KB

    The IRFC43N50KB has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 500V Min.,the test conditions is VGS=0V,ID=250A.When parameter is RDS(on),the descrip...

  • IRFC37N50A

    IRFC37N50A

    The IRFC37N50A has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 500V Min.,the test conditions is VGS=0V,ID=250A.When parameter is RDS(on),the descript...

  • IRFC350

    IRFC350

    The features of IRFC350 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperature reliability. The electrical charact...

  • IRFC2907B

    IRFC2907B

Hotspot Suppliers Product

  • Models: AT89LV52-12JC
Price: 1.6-2.55 USD

    AT89LV52-12JC

    Price: 1.6-2.55 USD

    AT89LV52-12JC - 8-Bit Microcontroller with 8K Bytes Flash - ATMEL Corporation

  • Models: 7MBR50NF060
Price: 70-90 USD

    7MBR50NF060

    Price: 70-90 USD

    IGBT MODULE, 600V, 50A, PIM

  • Models: TOP223YN
Price: 0.6-1.5 USD

    TOP223YN

    Price: 0.6-1.5 USD

    off-line PWM switch, TO-220, -0.3 to 700V

  • Models: TL074CN
Price: 0.1-10 USD

    TL074CN

    Price: 0.1-10 USD

    Low noise, JFET quad operational amplifier, DIP-16, ±18 V Supply voltage, 680 mW Power dissipation

  • Models: IRF530NPBF
Price: 0.19-0.4 USD

    IRF530NPBF

    Price: 0.19-0.4 USD

    Power MOSFET, TO-220, 12 A, ± 20 V, Advanced Process Technology, Ultra Low On-Resistance

  • Models: EKMM201VSN471MN45S
Price: 0.01-100 USD

    EKMM201VSN471MN45S

    Price: 0.01-100 USD

    large capacitance, aluminum electrolytic capacitor, 160 to 450Vdc, 470uF

  • Models: TPSE226K035R0300
Price: 0.46-0.64 USD

    TPSE226K035R0300

    Price: 0.46-0.64 USD

    CAP TANT LOWESR 22UF 35V 10% SMD - TPSE226K035R0300

  • Models: D8751H
Price: 40-44 USD

    D8751H

    Price: 40-44 USD

    high performance HMOS process, 2-level interrupt priority structure, DIP-48, -0.5V to +7V, 1.5W

  • Models: BSM100GD120DN2
Price: 1-1 USD

    BSM100GD120DN2

    Price: 1-1 USD

    BSM100GD120DN2 Infineon Technologies IGBT Modules

  • Models: TL431ACD
Price: 0.2-0.3 USD

    TL431ACD

    Price: 0.2-0.3 USD

    regulator diode, SOP, 37 V, –100 to +150 mA, Temperature Compensated

  • Models: EKMM201VSN681MR30S
Price: 0.01-100 USD

    EKMM201VSN681MR30S

    Price: 0.01-100 USD

    large capacitance, aluminum electrolytic capacitor, 160 to 450Vdc, Non solvent-proof type, 680uF

  • Models: 30L6P45
Price: 1-3 USD

    30L6P45

    Price: 1-3 USD

    rectifier module, 800V, 30A, 1.5Nm, 30L6P45, Toshiba

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All