IRFD014

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Configuration : Single Dual Drain
Continuous Drain Current : 1.7 A
Package / Case : HexDIP-4
Resistance Drain-Source RDS (on) : 200 mOhms


Features:






Specifications






Description

The IRFD014 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is P-channel.The fourth one is 175 operating temperature.The fifth one is fast switching.The sixth one is ease of paralleling.The seventh one is simple drive requirements.

Third generation HEXFETs IRFD014 from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.The 4-pin DIP package is low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers.The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

The IRFD014 has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is 1.7,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is 1.2,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is 14,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 1.3,the units is W.When parameter is junction and storage temperature range,the Max. is -55 to +175,the units IRFD014 is .When parameter is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .