The IRFD014 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is P-channel.The fourth one is 175 operating temperature.The fifth one is fast switching.The sixth one is ease of paralleling.The ...
The IRFC460AB has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 515V Min.,the test conditions is VGS=0V,ID=150A.When parameter is RDS(on),the descripti...
The features of IRFC450 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperature reliability.
The electrical charact...
The IRFC43N50KB has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 500V Min.,the test conditions is VGS=0V,ID=250A.When parameter is RDS(on),the descrip...
The IRFC37N50A has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 500V Min.,the test conditions is VGS=0V,ID=250A.When parameter is RDS(on),the descript...