IRFD110

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 540 mOhms
Package / Case : HexDIP-4
Continuous Drain Current : 1 A


Features:

• 1A, 100V
• r_DS(ON) = 0.600
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

		IRFD110	UNITS
Drain to Source Voltage (Note 1)	VDS	100	V
Drain to Gate Voltage (RGS = 20k) (Note 1)	VDGR	100	V
Continuous Drain Current	ID	1.0	A
Pulsed Drain Current (Note 3)	IDM	8.0	A
Gate to Source Voltage	VGS	±20	V
Maximum Power Dissipation	PD	1.0	W
Linear Derating Factor		0.008	W/
Single Pulse Avalanche Energy Rating (Note 4)	EAS	19	mJ
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s	TL	300
Package Body for 10s, See Techbrief 334	Tpkg	260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25to 125.