Purchase IRFD110, SiHFD110, In-stock IRFD110, SiHFD110 From SeekIC.
- Table of contents:
IRFD110, SiHFD110
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Suppliers
DataSheet
General Description
IRFD110, SiHFD110 General Description
Power MOSFET
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
IRFD110, SiHFD110 Relative Products
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IRFD014
The IRFD014 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is P-channel.The fourth one is 175 operating temperature.The fifth one is fast switching.The sixth one is ease of paralleling.The ...
IRFC460AB
The IRFC460AB has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 515V Min.,the test conditions is VGS=0V,ID=150A.When parameter is RDS(on),the descripti...
IRFC450
The features of IRFC450 are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperature reliability. The electrical charact...
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