IRFD9024

The IRFD9024 is designed as one kind of P-Channel enhancement mode silicon gate power field effect transistor device that can be used in wide range of applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features of the IRFD9024 are:(1)12A, 200V; (2)rDS(ON) = 0.500 ; (3)single pulse avalanche energy rated; (4)SOA is power dissipation limited; (5)nanosecond switching speeds; (6)linear transfer characteristics; (7)high input impedance.

The absolute maximum ratings of the IRFD9024 can be summarized as:(1)Drain to Source Breakdown Voltage: -200 V;(2)Drain to Gate Voltage (RGS = 20 k): -200 V;(3)Continuous Drain Current: -12 A;(4)Pulsed Drain Current: -48 A;(5)Gate to Source Voltage: ±20 V;(6)Maximum Power Dissipation: 150 W;(7)Linear Derating Factor: 1.2 W/;(8)Single Pulse Avalanche Energy Rating: 790 mJ;(9)Operating and Storage Temperature: -55 to 150 ;(10)Maximum Temperature for Soldering Maximum Temperature for Soldering: 300 ;(11)Maximum Temperature for Soldering Package Body for 10s, See Techbrief 334: 260 .

The electrical characteristics of this device can be summarized as:(1)Drain to Source Breakdown Voltage: -200 V;(2)Gate Threshold Voltage: -2.0 to -4.0 V;(3)Zero Gate Voltage Drain Current: 25 or 250 uA;(4)On-State Drain Current: -12 A;(5)Gate to Source Leakage Current: ±100 nA;(6)Drain to Source On Resistance: 0.380 to 0.500 ;(7)Forward Transconductance: 3.8 to 5.7 S;(8)Turn-On Delay Time: 18 to 22 ns. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .