IRFDC20

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Configuration : Single Dual Drain
Package / Case : HexDIP-4
Resistance Drain-Source RDS (on) : 4400 mOhms
Continuous Drain Current : 0.32 A


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	0.32	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	0.20
IDM	Pulsed Drain Current 	2.6
PD @TC = 25°C	Power Dissipation	1.0	W
	Linear Derating Factor	0.0083	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy‚	50	mJ
IAR	Avalanche Current	0.32	A
EAR	Repetitive Avalanche Energy	0.10	mJ
dv/dt	Peak Diode Recovery dv/dt	3.0	V/ns
TJ	Operating Junction and	-55 to + 150	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Description

Third Generation HEXFETs IRFDC20 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4-pin DIP package IRFDC20 is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.