MFG:IR Package Cooled:N/A D/C:80
MFG: IR
Package Cooled: N/A
D/C: 80
Description: Third Generation HEXFETs from International Rectifier provide the designer with the best combination o...
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V | 0.32 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V | 0.20 | |
|
IDM |
Pulsed Drain Current | 2.6 | |
|
PD @TC = 25°C |
Power Dissipation | 1.0 |
W |
| Linear Derating Factor | 0.0083 |
W/°C | |
|
VGS |
Gate-to-Source Voltage | ±20 |
V |
|
EAS |
Single Pulse Avalanche Energy‚ | 50 |
mJ |
|
IAR |
Avalanche Current | 0.32 |
A |
|
EAR |
Repetitive Avalanche Energy | 0.10 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt | 3.0 |
V/ns |
|
TJ |
Operating Junction and | -55 to + 150 |
°C |
|
TSTG |
Storage Temperature Range | ||
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
IRFDC20
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