IRFF210

Features:

 Repetitive Avalanche Ratings
 Dynamic dv/dt Rating
 Hermetically Sealed
 Simple Drive Requirements
 Ease of Paralleling


Specifications

	Parameter		Units
ID @ VGS = 10V, TC = 25°C	Continuous Drain Current	-2.25	A
ID @ VGS = 10V, TC = 100°C	Continuous Drain Current	-1.50
IDM	Pulsed Drain Current ➀	-9.0
PD @ TC = 25°C	Max. Power Dissipation	15	W
	Linear Derating Factor	0.12	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy ➁	48	mJ
IAR	Avalanche Current ➀	-	A
EAR	Repetitive Avalanche Energy ➀	-	mJ
dv/dt	Peak Diode Recovery dv/dt ➂	-5.0	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150	oC
	Lead Temperature	300 (0.063 in. (1.6mm) from case for 10s)
	Weight	0.98(typical)	g

Description

The HEXFET^®technology IRFF210 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest"State of the Art" design achieves: very low on-state resistance combined with high transconductance.

The HEXFET transistors IRFF210 also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

They are well suited for applications such as switching power supplies IRFF210, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.