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| Parameter | Units | ||
| ID @ VGS=10V, TC = 25°C | Continuous Drain Current | -4.0 | A |
| ID @ VGS=10V, TC = 100°C | Continuous Drain Current | -2.4 | |
| IDM | Pulsed Drain Current | -16 | |
| PD @ TC = 25°C | Max. Power Dissipation | 25 | W |
| Linear Derating Factor | 0.20 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalance Energy | 75 | mJ |
| IAR | Avalance Current | - | A |
| EAR | Repetitive Avalanche Energy | - | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -5.0 | V/ns |
| TJ Tstg |
Operating Junction Storage Temperature Range |
-55 to 150 | °C |
| Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10s) | ||
| Weight | 0.98(typical) | g |
IRFF9230
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