IRFH7932TRPBF

MOSFET

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IRFH7932TRPBF Picture
SeekIC No. : 00155764 Detail

IRFH7932TRPBF: MOSFET

floor Price/Ceiling Price

US $ .32~.34 / Piece | Get Latest Price
Part Number:
IRFH7932TRPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2770
  • 2770~4000
  • Unit Price
  • $.34
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 104 A
Resistance Drain-Source RDS (on) : 3.9 mOhms Packaging : Reel    

Description

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 3.9 mOhms
Continuous Drain Current : 104 A


Pinout

  Connection Diagram


Description

The IRFH7932TRPBF is designed as one kind of HEXFET power MOSFETs with typical applications of synchronous MOSFET for notebook processor power and synchronous rectifer MOSFET for isolated DC-DC converters in networking systems.

It has eight features of the IRFH7932TRPBF. (1)Very low RDS(ON) at 4.5V Vgs. (2)Low gate charge. (3)Fully characterized avalanche voltage and current. (4)100% tested for RG. (5)Lead-free (qualified up to 260°C reflow). (6)RoHS compliant (halogen free). (7)Low thermal resistance. (8)Large source lead for more reliable soldering. Those are all the main features.

Some absolute maximum ratings of the IRFH7932TRPBF have been concluded into several points as follow. (1)Its drain to source voltage would be 30V. (2)Its gate to source voltage would be +/-20V. (3)Its continuous drain current, Vgs=10V would be 25A at Ta=25°C and would be 20A at Ta=70°C and would be 104A at Tc=25°C. (4)Its pulsed drain current would be 200A. (5)Its power dissipation would be 3.4W at Ta=25°C and would be 2.2W at Ta=70°C. (6)Its linear derating factor would be 0.03W/°C. (7)Its operating junction temperature range of the IRFH7932TRPBF would be from -55°C to 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of the IRFH7932TRPBF are concluded as follow. (1)Its drain to source breakdown voltage would be min 30V. (2)Its breakdown voltage temperature coefficient would be typ 0.021V/°C. (3)Its static drain to source on-resistance would be typ 2.5mohms and max 3.3mohms at Vgs=10V and Id=25A. (4)Its gate threshold voltage would be min 1.35V and typ 1.8V and max 2.35V. (5)Its gate threshold voltage coefficient would be typ -5.9mV/°C. (6)Its gate to source forward leakage would be max 100nA. (7)Its gate to source reverse leakage fo the IRFH7932TRPBF would be max -100nA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




Parameters:

Technical/Catalog InformationIRFH7932TRPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C24A
Rds On (Max) @ Id, Vgs3.3 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 4270pF @ 15V
Power - Max3.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs51nC @ 4.5V
Package / Case8-PQFN
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFH7932TRPBF
IRFH7932TRPBF
IRFH7932TRPBFTR ND
IRFH7932TRPBFTRND
IRFH7932TRPBFTR



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