IRFI1310N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 24A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 56W
Input Capacitance (Ciss) @ Vds: 1900pF @ 25V
Package / Case: TO-220-3 Full Pack
Gate Charge (Qg) @ Vgs: 120nC @ 10V
Manufacturer: International Rectifier
Supplier Device Package: TO-220AB Full-Pak
Rds On (Max) @ Id, Vgs: 36 mOhm @ 13A, 10V


Features:

` Advanced Process Technology
` Isolated Package
` High Voltage Isolation = 2.5KVRMS .
` Sink to Lead Creepage Dist. = 4.8mm
` Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	24	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	17
IDM	Pulsed Drain Current	140
PD @TC = 25°C	Power Dissipation	56	W
	Linear Derating Factor	0.37	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	420	mJ
IAR	Avalanche Current	22	A
EAR	Repetitive Avalanche Energy	5.6	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs IRFI1310N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak IRFI1310N eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.