IRFI9634G

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 1 Ohms
Continuous Drain Current : 4.1 A
Package / Case : TO-220 Full-Pak
Drain-Source Breakdown Voltage : - 250 V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	-4.1	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	-2.6
IDM	Pulsed Drain Current	-16
PD @TC = 25°C	Power Dissipation	35	W
	Linear Derating Factor	0.28	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	520	mJ
IAR	Avalanche Current	-4.1	A
EAR	Repetitive Avalanche Energy	3.5	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

Third Generation HEXFETs IRFI9634G from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 Fullpak IRFI9634G eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.