MFG:IR Package Cooled:SOT-223 D/C:09+
MFG: IR
Package Cooled: SOT-223
D/C: 09+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 5.1 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 4.1 | A |
| IDM | Pulsed Drain Current | 41 | A |
| PD @TC = 25°C | Power Dissipation | 2.8 | |
| PD @TC = 25°C | Power Dissipation | 1.0 | W |
| Linear Derating Factor | 0.02 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS(Thermally limited) | Single Pulse Avalanche Energy | 13 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 32 | mJ |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| TJ | Operating Junction and | -55 to + 150 | °C |
| TSTG | Storage Temperature Range | -55 to + 150 | °C |
IRFL024Z
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