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MFG:IOR Package Cooled:TO223
Part Number: IRFL110
MFG: IOR
Package Cooled: TO223
Description: Third Generation HEXFETs from International Rectifier provide the designer with the best combination o...
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IRFL110
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DataSheet
General Description
IRFL110 General Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.
IRFL110 Maximum Ratings
| Parameter | Max. | Units | |
| ID @ Tc = 25°C | Continuous Drain Current, VGS @ 10 V | 1.5 | A |
| ID @ Tc = 100°C | Continuous Drain Current, VGS @ 10 V | 0.96 | |
| IDM | Pulsed Drain Current | 12 | |
| PD @Tc = 25°C | Power Dissipation | 3.1 | W |
| PD @TA = 25°C | Power Dissipation (PCB Mount)** | 2.0 | |
| Linear Derating Factor | 0.025 | W/°C | |
| Linear Derating Factor (PCB Mount)** | 0.017 | ||
| VGS | Gate-to-Source Voltage | -/+20 | V |
| EAS | Single Pulse Avalanche Energy | 150 | mJ |
| IAR | Avalanche Current | 1.5 | A |
| EAR | Repetitive Avalanche Energy | 0.31 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.5 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
| Soldewring Temperature, for 10 seconds | 300 (1.6mm from case) |
IRFL110
PDF/DataSheet Download
- Datasheet: IRFL110
- File Size: 426094 KB
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